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2SC5071
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5071 500 400 10 12(Pulse24) 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P)
5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=-1A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ
(Ta=25C) 2SC5071 Unit
A A
19.90.3
V V V MHz pF
4.0
a b
o3.20.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.7 IB2 (A) -1.4 ton (s) 1.0max tstg (s) 3.0max tf (s) 0.5max
5.450.1 B C E
5.450.1
Weight : Approx 6.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
12
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
(IC/I B= 5) Collector-Emitter Saturation Voltage V C E (s at)( V ) Base-Emitter Saturation Voltage V B E (s at)( V)
IC - V BE Temperature Characteristics (Typical)
(V CE= 4V) 12
1A
10 Collector Current I C (A)
80 0m A
60 0m A
10 V B E( sat) 1
-55C (Case Temp)
Collector Current I C (A)
8
400m A
8
6
25C (Cas
125C (C
e Temp)
as e 25 Temp ) C
6
emp se T (Ca 25C
mp
4
4
se
IB=100mA
2
V C E( sat) 0 0.02 0.05 0.1 0.5 1 5
-5
0
0
1
2
3
4
10
0
0
0.5 Base-Emittor Voltage V B E( V)
12
12
5
C
2
-55C
5
5C
C
(C
(Cas
(Ca
e Te
Te
200mA
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
(V C E= 4V) 40 125C DC Cur rent Gain h F E 5
j - a( C/W)
hFE - IC Characteristics (Typical)
t on*t s tg *t f ( s)
t on* t stg * t f - I C Characteristics (Typical)
j-a - t Characteristics
3
25C -30C
1 0.5 tf
Transient Thermal Resistance
VCC 200V I C: I B1: I B2= 10:1:-2
t s tg
Swi tchi ng T im e
1
0.5
10 8 0.02 0.05 0.1 0.5 1 5 10 12
0.1 0.5
t on 1 Collector Current I C( A) 5 10 12
0.3
1
10 Time t(ms)
100
mp)
emp ase T
)
)
)
1.0
1000
Collector Current I C( A)
Safe Operating Area (Single Pulse)
30
10 0 s
Reverse Bias Safe Operating Area
30 100
P c - T a Derating
10 Co lle ctor Cu rren t I C (A) Collector Curr ent I C (A) 5
10 5
M aximum Power Dissipa ti on P C( W)
W ith In fin ite he
50
at si nk
1 0.5 Without Heatsink Natural Cooling
1 0.5 Without Heatsink Natural Cooling L=3mH IB2 =1.0A Duty:less than 1%
0.1 5
10
50
100
500
0.1 5
10
50
100
500
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
124

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